Renesas fortifies its dominance in power solutions through the launch of innovative Gallium Nitride Field Effect Transistors (FETs) for dense power conversion in Artificial Intelligence data centers, industrial applications, and charging systems.

Renesas Electronics Corporation has announced the introduction of three new high-voltage 650V GaN FETs, marking a significant step forward in their power semiconductor offerings. These innovative devices, based on Renesas' 4th-generation plus (Gen IV Plus) SuperGaN® technology, are designed to address the growing demand for efficient, high-density power conversion in AI data centers, industrial applications, and charging systems.

The new 650V GaN FETs are uniquely positioned in the market with their comprehensive solutions, offering several key features that significantly enhance power system design. They boast a high voltage rating of 650V, making them suitable for multi-kilowatt-class power conversion applications. Built on a field-proven depletion mode (d-mode) normally-off architecture, originating from Transphorm technology acquired by Renesas in 2024, the Gen IV Plus SuperGaN technology provides a robust foundation for these new FETs.

One of the standout features of the new GaN FETs is their silicon-compatible gate drive input, which enables ease of integration with existing silicon MOSFET driver circuits, maintaining operational simplicity. The devices are available in TOLT, TO-247, and TOLL packages, providing flexibility for thermal management and board design tailored to specific power system architectures.

The new GaN FETs offer several benefits, including superior efficiency, enhanced thermal performance, design flexibility, high reliability, and simplified integration. Compared to SiC and silicon-based semiconductor switching devices, GaN provides superior efficiency, higher switching frequency, and smaller footprints. This results in lower energy waste and heat generation, enabling more compact designs and better reliability in dense power conversion environments.

Renesas' GaN devices have a strong track record, with over 20 million devices shipped and more than 300 billion hours of cumulative field operation. The new GaN FETs will be integrated with Renesas drivers and controllers to deliver complete power solutions.

GaN-based switching devices are growing as key technologies for next-generation power semiconductors, particularly in EVs, inverters, AI data centers, renewable energy, and industrial power conversion. The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas' acquisition of Transphorm last year.

In conclusion, these new Renesas 650V GaN FETs provide robust, high-performance, efficient, and flexible power solutions ideal for modern high-density power conversion needs in critical infrastructure and advanced technology sectors. The devices are designed for AI data centers, server power supply systems, E-mobility charging, UPS battery backup devices, battery energy storage, and solar inverters. With their superior efficiency, enhanced thermal performance, design flexibility, high reliability, and simplified integration, these new GaN FETs are poised to revolutionize power system design in various sectors.

[1] Renesas Electronics Corporation. (2022). Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems. Retrieved from https://www.renesas.com/us/en/about/news/news-2022/news20220816-01-en.html [2] Renesas Electronics Corporation. (2022). Renesas GaN FETs for Industrial, Automotive, and Charging Applications. Retrieved from https://www.renesas.com/us/en/products/power-management/gan/gan-fets.html [3] Transphorm, Inc. (2022). SuperGaN® Technology. Retrieved from https://www.transphormusa.com/technology/supergan-technology [4] Transphorm, Inc. (2022). Field Proven Depletion Mode (d-mode) GaN FETs. Retrieved from https://www.transphormusa.com/products/gan-power-devices/depletion-mode-d-mode-gan-fets

The new 650V GaN FETs, introduced by Renesas Electronics Corporation, are not only suitable for multi-kilowatt-class power conversion applications but also offer unique advantages in data-and-cloud-computing and technology sectors, such as AI data centers.
With their superior efficiency and design flexibility, these GaN FETs from Renesas Electronics Corporation are vital gadgets in the advancement of power system design in various sectors, including industrial applications and charging systems.

Renesas fortifies its dominance in power solutions through the launch of innovative Gallium Nitride Field Effect Transistors (FETs) for dense power conversion in Artificial Intelligence data centers, industrial applications, and charging systems.